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 APM4532K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
*
N-Channel 30V/5A, RDS(ON) =35m(typ.) @ VGS = 10V RDS(ON) =60m(typ.) @ VGS = 4.5V
Pin Description
D1 D1 D2 D2
*
P-Channel -30V/-3.5A, RDS(ON) =85m(typ.) @ VGS =-10V RDS(ON) =135m(typ.) @ VGS =-4.5V
S1 G1 S2 G2
Top View of SOP - 8
(8) D1 (7) D1 (3) S2
* * *
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
(2) G1 (4) G2
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
S1 (1)
D2 (5)
D2 (6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM4532 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM4532 K :
APM4532 XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw
APM4532K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA*
Note: *Surface Mounted on 1in pad area, t 10sec.
2
(TA = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation TA=25C TA=100C VGS=10V
N Channel 30 20 5 20 1.7
P Channel -30 20 -3.5 -14 -1.7
Unit V A A C W C/W
150 -55 to 150 2 0.8 62.5
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol Parameter
(TA = 25C unless otherwise noted)
APM4532K Min. Typ. Max.
Test Condition
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85C VDS=-24V, VGS=0V TJ=85C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=20V, VDS=0V VGS=10V, IDS=5A RDS(ON)
a
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
30 -30 1 30 -1 -30 1 -1 1.5 -1.5 2 -2 100 100 35 85 60 135 45 95 70 150
V
A
V
nA
Drain-Source On-State Resistance
VGS=-10V, IDS=-3.5A VGS=4.5V, IDS=4A VGS=-4.5V, IDS=-2.5A
m
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
2
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APM4532K
Electrical Characteristics (Cont.)
Symbol Parameter
(TA = 25C unless otherwise noted)
APM4532K Min. Typ. Max.
Test Condition
Unit
Diode Characteristics VSD
a
Diode Forward Voltage
b
ISD=1.7A, VGS=0V ISD=-1.7A, VGS=0V
N-Ch P-Ch
0.7 -0.7
1.3 -1.3
V
Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance
VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=25V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-25V, N-Channel VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 P-Channel VDD=-15V, RL=15, IDS=-1A, VGEN=-10V, RG=6
b
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
3 13 440 530 90 90 40 40 10 8 8 7 20 15 5 7 15 15 20 20 28 28 15 18
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
pF
ns
Gate Charge Characteristics Qg Qgs Qgd
Notes:
Total Gate Charge Gate-Source Charge Gate-Drain Charge
N-Channel VDS=15V, VGS=10V, IDS=5A P-Channel VDS=-15V, VGS=-10V, IDS=-3.5A
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
12.6 8 4.7 2 1.1 1
17 12 nC
a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
3
www.anpec.com.tw
APM4532K
Typical Characteristics
N-Channel Power Dissipation
2.5 6
Drain Current
2.0
5
ID - Drain Current (A)
TA=25 C
o
Ptot - Power (W)
4
1.5
3
1.0
2
0.5
1 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
o
0.0
0
20
40
60
80 100 120 140 160
0
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area
Normalized Transient Thermal Resistance
100 2 1
Thermal Transient Impedance
Duty = 0.5 0.2
ID - Drain Current (A)
10
on )L
im
it
Rd
s(
300s 1ms
0.1
0.05 0.02 0.01
0.1
1
10ms 100ms 1s
0.01
Single Pulse Mounted on 1in pad o RJA : 62.5 C/W
2
0.1
DC
0.01 0.01
TA=25 C 0.1 1 10 100
O
1E-3 1E-4
1E-3
0.01
0.1
1
10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
4
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APM4532K
Typical Characteristics (Cont.)
N-Channel Output Characteristics
20 18 16 VGS=5,6,7,8,9,10V 100 90
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
80 70 60 50 40 30 20 10 VGS=10V VGS=4.5V
ID - Drain Current (A)
14 12 10 8 6 4 3V 2 0 0 1 2 3 4 5 4V
0
0
4
8
12
16
20
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
20 18 16
Gate Threshold Voltage
1.6 IDS=250 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25
ID - Drain Current (A)
14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Tj=25 C
o
Tj=125 C Tj=-55 C
o
o
Normalized Threshold Voltage
0
25
50
75
100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
5
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APM4532K
Typical Characteristics (Cont.)
N-Channel Drain-Source On Resistance
2.0 1.8 VGS = 10V IDS = 5A 20 10 Tj=150 C
o
Source-Drain Diode Forward
Normalized On Resistance
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 35m 0 25 50 75 100 125 150
o
IS - Source Current (A)
1
Tj=25 C
o
0.1 0.0
0.2
0.4
0.6
0.8 1.0
1.2 1.4
1.6
Tj - Junction Temperature (C)
VSD - Source - Drain Voltage (V)
Capacitance
700 Frequency=1MHz 9 600 10 VDS=10V IDS= 5A
Gate Charge
VGS - Gate - source Voltage (V)
8 7 6 5 4 3 2 1 0 0 3 6 9 12 15
C - Capacitance (pF)
500 Ciss 400 300 200 100 0 Coss Crss
0
5
10
15
20
25
30
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
6
www.anpec.com.tw
APM4532K
Typical Characteristics (Cont.)
P-Channel Power Dissipation
2.5 4
Drain Current
2.0
1.5
-ID - Drain Current (A)
3
Ptot - Power (W)
2
1.0
1
0.5
o
0.0
TA=25 C 0 20 40 60 80 100 120 140 160
TA=25 C,VG=-10V 0 0 20 40 60 80 100 120 140 160
o
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
2 1
Thermal Transient Impedance
Duty = 0.5 0.2 0.1
-ID - Drain Current (A)
it
10
on )L
im
300s 1ms 10ms 100ms 1s
Rd
0.1
0.05 0.02 0.01
1
s(
0.01
Single Pulse Mounted on 1in pad o RJA : 62.5 C/W
2
0.1
DC
0.01 0.01
TA=25 C
O
0.1
1
10
100
1E-3 1E-4
1E-3
0.01
0.1
1
10 30
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
7
www.anpec.com.tw
APM4532K
Typical Characteristics (Cont.)
P-Channel Output Characteristics
14 VGS= -5,-6,-7,-8,-9,-10V 12 240 220
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
200 180 160 140 120 100 80 60 40 20
VGS= -4.5V
-ID - Drain Current (A)
10 8 -4V 6 4 2 0 -3V
VGS= -10V
0
1
2
3
4
5
0
0
2
4
6
8
10
12
14
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
14 12 1.8
Gate Threshold Voltage
IDS= -250 1.6
Normalized Threshold Voltage
-ID - Drain Current (A)
10 8 6 4 2 0
Tj=-55 C Tj=25 C
o
o
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25
Tj=125 C
o
0
1
2
3
4
5
6
7
0
25
50
75
100 125 150
-VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
8
www.anpec.com.tw
APM4532K
Typical Characteristics (Cont.)
P-Channel Drain-Source On Resistance
1.8 VGS = -10V 1.6 IDS = -3.5A
Source-Drain Diode Forward
20 10
o
Normalized On Resistance
-IS - Source Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 R ON@Tj=25 C: 85m 0 25 50 75 100 125 150
o
Tj=150 C
o
Tj=25 C 1
0.1
0.04 0.0
0.4
0.8
1.2
1.6
2.0
Tj - Junction Temperature (C)
-VSD - Source - Drain Voltage (V)
Capacitance
800 Frequency=1MHz 700 9 10 VDS= -10V IDS= -3.5A
Gate Charge
-VGS - Gate - source Voltage (V)
30
8 7 6 5 4 3 2 1
600
C - Capacitance (pF)
Ciss 500 400 300 200 100 Crss 0 0 5 10 15 20 25 Coss
0
0
1
2
3
4
5
6
7
8
-VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
9
www.anpec.com.tw
APM4532K
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
10
www.anpec.com.tw
APM4532K
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp C ritical Zone T L to T P
R am p-up
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 25 C to Peak
T im e
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw
APM4532K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
12
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APM4532K
Carrier Tape & Reel Dimensions(Cont.)
T2
J C A B
T1
Application
A 3301 F 5.5 0.1
B 62 1.5
C 12.75 + 0.1 5
J 2 + 0.5
T1 12.4 +0.2 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1
W 12 + 0.3 - 0.1 Bo 5.2 0.1
P 8 0.1
E 1.75 0.1
SOP-8
D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1
Ko t 2.1 0.1 0.30.013
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3
(mm)
Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005
13
www.anpec.com.tw


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